P/N |
Brand |
D/C |
Package |
Qty |
Remark |
IPW60R018CFD7 |
INFINEON |
22+ |
TO-247 |
2500 |
TO-247-3 -55°C~150°C(TJ) N-Channel 101000mA(TC) 0.018Ω@58200mA,10V 416W(TC) 20V,-20V 600V |
K4B4G1646D-BCK0 |
SAMSUNG |
22+ |
BGA |
5600 |
|
INA139NA/3K |
TI |
22+ |
SOT-153 |
2500 |
2.7V~40V |
KLM8G1GETF-B041T06 |
SAMSUNG |
22+ |
BGA |
3360 |
|
INA210BIDCKR |
TI |
22+ |
SC-70-6 |
2500 |
1 - 14kHz 28µA 65µA SC-70-6 0.55µV 2.7 V ~ 26 V |
KLMAG1JETD-B041006 |
SAMSUNG |
22+ |
BGA-153 |
4480 |
|
STTH1602CT |
ST |
22+ |
TO-220-3 |
2500 |
TO-220-3 Fast Recovery =< 500ns, > 200mA (Io) 10000mA 200V 1.1V@8000mA |
KLMBG2JETD-B041T09 |
SAMSUNG |
22+ |
BGA |
5600 |
|
AD820ANZ |
ADI |
22+ |
8-PDIP |
2500 |
Rail-to-Rail J-FET 700µA 1.8 MHz 2 pA 8-PDIP 1 20 mA 400 µV |
K4E8E324EB-EGCG000 |
SAMSUNG |
22+ |
BGA |
6720 |
|